Forming defect prevention trenches in dicing streets

Details Forming defect prevention trenches in dicing streets Forming defect prevention trenches in dicing streets

2005-01-04

2005-01-04

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S114000, C438S465000

Reexamination Certificate

active

06838299

ABSTRACT:
A method of dicing a microelectronic device wafer comprising forming at least one trench in at least one dicing street on the microelectronic device wafer, wherein the trench prevents cracking and/or delamination problems in the interconnect layer of the microelectronic device wafers caused by a subsequent dicing by a wafer saw.

REFERENCES:
patent: 5024970 (1991-06-01), Mori
patent: 6306731 (2001-10-01), Igarashi et al.
patent: 6365958 (2002-04-01), Ibnabdeljalil et al.
patent: 19840508 (1999-12-01), None
S. Wolf and R.N. Tauber, “Silicon Processing for the VLSI Era vol. 1-Process Technology”, 1986 by Lattice Press, vol. 1, Chapter 16.

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