Non-volatile semiconductor memory device reading and writing...

Details Non-volatile semiconductor memory device reading and writing... Non-volatile semiconductor memory device reading and writing...

2005-01-25

2005-01-25

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185170, C365S185220, C365S185200, C365S185110

Reexamination Certificate

active

06847555

ABSTRACT:
A non-volatile semiconductor memory device includes: a memory cell array in which a plurality of electrically rewritable and non-volatile memory cells are arranged; a sense amplifier circuit configured to write M-value data (where, M is an integer equal to 4 or more) to pair-cells each constituted by simultaneously selected first and second memory cells connected to a pair of bit lines in the memory cell array, the M-value data being defined as a combination of different threshold levels of the first and second memory cells in M threshold levels to be set at each memory cell, and read M-value data stored in each pair-cell by sensing a difference between cell currents of the first and second memory cells; and a controller configured to control data write and read operations for the memory cell array.

REFERENCES:
patent: 5208771 (1993-05-01), Shikata
patent: 5844841 (1998-12-01), Takeuchi et al.
patent: 6639862 (2003-10-01), Spirkl
patent: 6738282 (2004-05-01), Jo

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