Semiconductor device including dissimilar element-diffused...

Details Semiconductor device including dissimilar element-diffused... Semiconductor device including dissimilar element-diffused...

2005-09-27

2005-09-27

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S759000, C257S760000, C257S773000, C257S774000

Reexamination Certificate

active

06949832

ABSTRACT:
An interconnect trench is formed on a dielectric layer12and a first HSQ layer14formed on a semiconductor substrate, and a tantalum family barrier metal layer24ais formed all over the substrate. Then a seed copper-containing metal layer60and a plated copper layer62are formed so as to fill a part of the interconnect trench. After that, a bias-sputtered copper-containing metal layer64is formed on the plated copper layer62so as to fill the remaining portion of the interconnect trench and then heat treatment is performed. As a result, a dissimilar metal contained in the bias-sputtered copper-containing metal layer64diffuses uniformly into the plated copper layer62.

REFERENCES:
patent: 5968333 (1999-10-01), Nogami et al.
patent: 5969422 (1999-10-01), Ting et al.
patent: 6043153 (2000-03-01), Nogami et al.
patent: 6121141 (2000-09-01), Woo et al.
patent: 6242349 (2001-06-01), Nogami et al.
patent: 6465376 (2002-10-01), Uzoh et al.
patent: 11-204524 (1999-07-01), None
patent: 2000-306996 (2000-11-01), None
T. Takewaki, et al., “Formation of gian-grain copper interconnects by a low-energy ion bombardment process for high-speed ULSIs”,Materials Chemistry and Physics41 (1995) pp. 182-191.

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