Microelectronic capacitor structure with radial current flow

Details Microelectronic capacitor structure with radial current flow Microelectronic capacitor structure with radial current flow

2005-01-25

2005-01-25

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With contact or metallization configuration to reduce...

C257S504000, C257S507000, C257S508000, C438S690000, C438S692000, C438S694000

Reexamination Certificate

active

06847092

ABSTRACT:
A capacitor for a semiconductor device and a method of manufacturing a capacitor for a semiconductor device is disclosed that uses radial current flow. The capacitor includes a semiconductor substrate that includes a plurality of insulation islands. An insulation layer is formed over the semiconductor substrate. Gate electrodes are formed on top of the insulation layer. An array of CD contact pads including a plurality of CD contacts are connected to the semiconductor substrate in a first predetermined number of locations. An array of CG contact pads including at least one CG contact connected to the gate electrodes such that each CG contact is connected to a respective gate electrode above a respective insulation island in a second predetermined number of locations.

REFERENCES:
patent: 6207571 (2001-03-01), Juengling et al.

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