Method of forming device isolation trench

Details Method of forming device isolation trench Method of forming device isolation trench

2005-01-11

2005-01-11

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S426000, C438S427000, C438S696000, C438S700000, C438S734000, C438S750000

Reexamination Certificate

active

06841452

ABSTRACT:
A silicon oxide film having a ununiform thickness is deposited inside each of trenches defined in a silicon substrate by etching within a device isolation region, in such a manner that only corner portions of trench bottoms are exposed. The silicon substrate is selectively etched from the exposed trench corner portions of the silicon substrate lying inside the trenches to thereby increase the volume of each trench.

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patent: 6015985 (2000-01-01), Ho et al.
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patent: 6238996 (2001-05-01), Liu et al.
patent: 05-029283 (1993-02-01), None
patent: 06-037275 (1994-02-01), None
patent: 2001-057382 (2001-02-01), None

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