Method for measuring capacitance-voltage curves for transistors

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C324S762010

Reexamination Certificate

active

06885214

ABSTRACT:
An apparatus for characterizing capacitance and thickness of an insulating layer constructed between a conductive gate and a substrate has at least one test structure formed at a surface of a substrate. Each test structure has a bulk region formed of a semiconductor within the surface. Further the test structure has at least one source region and one drain region within the bulk region. A thin insulating layer is placed above the each source region, each drain region, and the bulk region. A conductive gate is placed above the thin insulating layer. A capacitance-voltage measuring device measures a capacitance value of the test structure, while forcing the bulk region between the source region and the drain region to be floating. An insulating layer thickness calculator determines the thickness of the insulating layer from the capacitance.

REFERENCES:
patent: 5032786 (1991-07-01), Kimura
patent: 5485097 (1996-01-01), Wang
patent: 5561387 (1996-10-01), Lee
patent: 5793675 (1998-08-01), Cappelletti et al.
patent: 6011404 (2000-01-01), Ma et al.
patent: 6066952 (2000-05-01), Nowak et al.
patent: 6339339 (2002-01-01), Maeda
patent: 6456105 (2002-09-01), Tao
patent: 6472233 (2002-10-01), Ahmed et al.
patent: 6472236 (2002-10-01), Wang et al.
“Gate Dielectric Capacitance-Voltage Characterization Using the Model 4200 Semiconductor Characterization System,” Keithley, Application Notes Series, No. 2239, no month/year.
Agilent Technologies Impedance Measurement Handbook,2nd Edition, Application Note 5950, Staff, Agilent Technologies Co. Ltd., Palo Alto, CA, Copyright 2000, 5-12 to 5-14, no month.
“Evaluation of Gate Oxides Using a Voltage Step Quasi-Static CV Method”, Application Note 4156-10,Agilent Technologies,pp. 1-4, no month/yr.
MOS Capacitance Measurements for High-Leakage Thin Dielectrics, vol. 46, No. 7, Jul. 1999, pp. 1500-1501.
“MOS C-V Characterization of Ultrathin Gate Oxide Thickness (1.3-1.8 nm)”, Choi et al., IEEE Electron Device Letters, vol. 20, No. 6, Jun. 1999, pp. 292-294.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for measuring capacitance-voltage curves for transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for measuring capacitance-voltage curves for transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for measuring capacitance-voltage curves for transistors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3421712

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.