Structure for contact formation using a silicon-germanium alloy

Details Structure for contact formation using a silicon-germanium alloy Structure for contact formation using a silicon-germanium alloy

Filed on

2005-04-12

Date issued

2005-04-12

Examiner

Thompson, Craig A. (Department: 2813)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Combined with electrical contact or lead

SubSubClass

Of specified material other than unalloyed aluminum

Type

Reexamination Certificate

Status

active

Patent number

06879044

Description

ABSTRACT:
A new method and structure for an improved contact using doped silicon is provided. The structures are integrated into several higher level embodiments. The improved contact has low contact resistivity. Improved junctions are thus provided between an IGFET device and subsequent metallization layers. The improvements are obtained through the use of a silicon-germanium (Si—Ge) alloy. The alloy can be formed from depositing germanium onto the substrate and subsequently annealing the contact or by selectively depositing the preformed alloy into a contact opening. The above advantages are incorporated with relatively few process steps.

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