Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-07-05
2005-07-05
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000, C438S299000
Reexamination Certificate
active
06914336
ABSTRACT:
The present invention provides a structure for a semiconductor device, capable of eliminating the generation of defective products due to poor connection. In the present semiconductor device, an n-type high concentration diffusion layer2is selectively formed on the P-type silicon substrate1,and on the diffusion layer2,a silicon oxide film3is formed as a first interlayer insulating film3.A silicon plug4is disposed on the n-type high concentration diffusion layer2.On the top end surface of the polysilicon plug4,a silicide pad5is formed in a self-aligning manner such that the width of the silicide pad5is larger than that of the polysilicon plug4.A second interlayer insulating film is formed so as to cover the first interlayer insulating film3and the silicide pad5,and a tungsten plug7is disposed on the silicide pad5.On the second interlayer insulating film, wiring8,made of an aluminum-copper alloy and connected to the tungsten plug, is formed.
REFERENCES:
patent: 5364810 (1994-11-01), Kosa et al.
patent: 5366911 (1994-11-01), Lur et al.
patent: 5641991 (1997-06-01), Sakoh
patent: 5914518 (1999-06-01), Nguyen et al.
patent: 5929524 (1999-07-01), Drynan et al.
patent: 5998251 (1999-12-01), Wu et al.
patent: 6074921 (2000-06-01), Lin
patent: 6096595 (2000-08-01), Huang
patent: 6096644 (2000-08-01), Lukanc
patent: 6130102 (2000-10-01), White, Jr. et al.
patent: 6130124 (2000-10-01), Lee
patent: 6184584 (2001-02-01), Sakao
patent: 6222722 (2001-04-01), Fukuzumi et al.
patent: 6265779 (2001-07-01), Grill et al.
patent: 6271122 (2001-08-01), Wieczorek et al.
patent: 6291861 (2001-09-01), Iwata et al.
patent: 62-262443 (1987-11-01), None
patent: 9-232251 (1997-09-01), None
patent: 11-97528 (1999-04-01), None
patent: 11-145283 (1999-05-01), None
patent: 11-224939 (1999-08-01), None
patent: 11-330413 (1999-11-01), None
patent: 99-88255 (1999-12-01), None
Matsuki Takeo
Takaishi Yoshihiro
NEC Electronics Corporation
Nelms David
Nguyen Thinh T
Young & Thompson
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