Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-01-04
2005-01-04
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S756000, C438S757000
Reexamination Certificate
active
06838392
ABSTRACT:
A method of forming a semiconductor structure is described that includes etching a trench in a semiconductor substrate, wherein an oxide layer overlies the semiconductor substrate, and a nitride layer overlies the oxide layer; and cleaning the semiconductor substrate while simultaneously performing a pull back of the nitride layer. Methods of making semiconductor devices and electronic devices, and silicon wafers having trenches and isolation regions formed by the above-mentioned methods are also described.
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Coleman W. David
Cypress Semiconductor Corporation
Evan Law Group LLC
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