Methods of forming semiconductor structures, and articles...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S756000, C438S757000

Reexamination Certificate

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06838392

ABSTRACT:
A method of forming a semiconductor structure is described that includes etching a trench in a semiconductor substrate, wherein an oxide layer overlies the semiconductor substrate, and a nitride layer overlies the oxide layer; and cleaning the semiconductor substrate while simultaneously performing a pull back of the nitride layer. Methods of making semiconductor devices and electronic devices, and silicon wafers having trenches and isolation regions formed by the above-mentioned methods are also described.

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