Crystal layer separation method, laser irradiation method...

Details Crystal layer separation method, laser irradiation method... Crystal layer separation method, laser irradiation method...

2005-03-22

2005-03-22

Elve, M. Alexandra (Department: 1725)

Electric heating

Metal heating

By arc

C219S121850

Reexamination Certificate

active

06870125

ABSTRACT:
Disclosed are a crystal layer separation method capable of separating a crystal layer formed on a substrate therefrom without occurrence of any crack, and a laser irradiation method used therefor, and a method of fabricating devices using the same. The crystal layer separation method includes the step of separating a crystal layer made from a GaN based compound formed on a sapphire substrate therefrom by irradiating the crystal layer with a laser beam from the back surface of the substrate, wherein the crystal layer is irradiated with the laser beam in a line-shape. In this method, an irradiation width of the laser beam is preferably equal to or less than a thickness of the crystal layer, and the laser beam preferably has a light intensity distribution smoothened in the width direction.

REFERENCES:
patent: 6420242 (2002-07-01), Cheung et al.
patent: 6448102 (2002-09-01), Kneissl et al.
patent: 6562648 (2003-05-01), Wong et al.
patent: 04-182093 (1992-06-01), None
patent: 2000-101139 (2000-04-01), None

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