Variable temperature semiconductor film deposition

Details Variable temperature semiconductor film deposition Variable temperature semiconductor film deposition

1995-11-09

1998-01-27

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136260, 136265, 437 5, 437103, H01L 2120, H01L 3118

Patent

active

057121877

ABSTRACT:
A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

REFERENCES:
patent: 4207119 (1980-06-01), Tyan
patent: 4650921 (1987-03-01), Mitchell
patent: 4684761 (1987-08-01), Devaney
patent: 4709466 (1987-12-01), McCandless et al.
patent: 5248349 (1993-09-01), Foote et al.
patent: 5261968 (1993-11-01), Jordan et al.
patent: 5275714 (1994-01-01), Bonnet et al.
patent: 5304499 (1994-04-01), Bonnet et al.
patent: 5501744 (1996-03-01), Albright et al.
T.L. Chu et al, Conference Record, 19th IEEE Photovoltaic Specialists Conference (May 1987), pp. 1466-1469.

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