Magnetic sensing element with ESD resistance improved by...

Details Magnetic sensing element with ESD resistance improved by... Magnetic sensing element with ESD resistance improved by...

2005-03-15

2005-03-15

Heinz, A. J. (Department: 2653)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

06867952

ABSTRACT:
A magnetic sensing element having a reduced electrical resistance and a large exchange anisotropic magnetic field between a free layer and antiferromagnetic layers for exchange biasing is provided. The magnetic sensing element includes second antiferromagnetic layers and a free magnetic layer, and the length of the second antiferromagnetic layers in a height direction in side regions disposed at the lateral sides of a track width region is larger than the length of the free magnetic layer in the height direction in the track width region.

REFERENCES:
patent: 6074767 (2000-06-01), Lin
patent: 6381107 (2002-04-01), Redon et al.
patent: 7-114717 (1995-05-01), None

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