Method of making semiconductor device having a schottky gate ele

Details Method of making semiconductor device having a schottky gate ele Method of making semiconductor device having a schottky gate ele

1995-09-06

1998-01-27

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437175, H01L 21441

Patent

active

057121753

ABSTRACT:
A method of manufacturing a semiconductor device using an inexpensive apparatus such as an i-line stepper, with a high throughput and a high yield at a low cost. Exemplary embodiments of the method include a step for forming a first layer of an insulative film on a semiconductor substrate, a step of forming a second layer of a resist for gate patterning on the first layer of the insulative film, a step of forming a pattern having a desired gate length on the second layer of the resist, a step of transcribing a gate pattern in the first layer of the insulative film by an anisotropic etching, and a step of patterning a cap of a mushroom-type gate electrode or an eave of a .GAMMA.-type electrode by using a third layer of a resist.

REFERENCES:
patent: 4959326 (1990-09-01), Roman et al.
patent: 5147812 (1992-09-01), Gilbert et al.
patent: 5185277 (1993-02-01), Tung et al.

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