Method of manufacturing a bipolar transistor

Details Method of manufacturing a bipolar transistor Method of manufacturing a bipolar transistor

1996-03-19

1998-01-27

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 32, 437 63, 437 33, 437 70, 148DIG10, 148DIG11, H01L 21265

Patent

active

057121745

ABSTRACT:
In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the above semiconductor substrate is formed a P-type collector layer so that at least a part of the P-type collector layer is in contact with said oxide insulating layer. In the surface region of said P-type collector layer is formed a P-type collector contact layer. An N-type base layer is formed in that region on the surface side of said P-type collector layer in which said P-type collector contact layer does not exist. A P-type emitter layer is formed on the surface side of said N-type base layer. A P-type collector-contact/base leakage prevention layer, which has a higher impurity concentration than said P-type collector layer, is formed at least in that region of said P-type collector layer which is in contact with said oxide insulating layer, so as to prevent the generation of a leakage current between said P-type collector contact layer and said N-type base layer.

REFERENCES:
patent: 4891328 (1990-01-01), Gris
patent: 5001073 (1991-03-01), Huie
patent: 5248624 (1993-09-01), Icel et al.
patent: 5258317 (1993-11-01), Lien et al.

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