Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2005-01-25
2005-01-25
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S455000, C438S459000, C438S977000
Reexamination Certificate
active
06846703
ABSTRACT:
A memory IC includes a first substrate (substrate on the transfer destination side), and memory cell arrays deposited on the first substrate. The memory cell arrays are deposited from the bottom up by a method for transferring a thin film configuration. The transferring method includes the steps of forming a thin film device layer (memory cell array) on a second substrate with a separable layer therebetween, and irradiating the separable layer with light to cause a separation in the separable layer and/or at an interface so that the thin film device layer on the second substrate is transferred to the first substrate.
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Inoue Satoshi
Shimoda Tatsuya
Fourson George
Seiko Epson Corporation
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