Method of transferring a device, a method of producing a...

Details Method of transferring a device, a method of producing a... Method of transferring a device, a method of producing a...

2005-09-06

2005-09-06

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S464000, C438S060000

Reexamination Certificate

active

06939729

ABSTRACT:
The interface between a first substrate and light-emitting diodes formed on the first substrate is selectively irradiated with an energy beam and transmits the energy beam through the first substrate, thereby selectively releasing the light-emitting diodes. The light-emitting diodes are then transferred onto a device holding layer included on a device holding substrate. Subsequently, the light-emitting diodes are transferred onto a second substrate. The irradiation of the interface with the energy beam enables the devices to be easily released from the first substrate.

REFERENCES:
patent: 3783297 (1974-01-01), Houston
patent: 4383967 (1983-05-01), Balz
patent: 4451634 (1984-05-01), Hatanaka et al.
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5258320 (1993-11-01), Zavracky et al.
patent: 5438241 (1995-08-01), Zavracky et al.
patent: 5739800 (1998-04-01), Lebby et al.
patent: 5929962 (1999-07-01), Chiu et al.
patent: 6036809 (2000-03-01), Kelly et al.
patent: 6204079 (2001-03-01), Aspar et al.
patent: 6277711 (2001-08-01), Wu
patent: 6283693 (2001-09-01), Acello et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6420242 (2002-07-01), Cheung et al.
patent: 6757314 (2004-06-01), Kneissl et al.
patent: 2001/0018229 (2001-08-01), Kato et al.
patent: 2002/0055239 (2002-05-01), Tuominen et al.
patent: 2002/0078559 (2002-06-01), Buchwalter et al.
patent: 2002/0082543 (2002-06-01), Park et al.
patent: 0 905 673 (1999-03-01), None
patent: 56-17385 (1981-02-01), None
patent: 60-181778 (1985-09-01), None
patent: 04-010671 (1992-01-01), None
patent: 04-247486 (1992-09-01), None
patent: 05-290669 (1993-11-01), None
patent: 05-315643 (1993-11-01), None
patent: 06-504139 (1994-05-01), None
patent: 07-110660 (1995-04-01), None
patent: 7-254690 (1995-10-01), None
patent: 07-263754 (1995-10-01), None
patent: 08-107293 (1996-04-01), None
patent: 08-264841 (1996-10-01), None
patent: 09-293904 (1997-11-01), None
patent: 10-070151 (1998-03-01), None
patent: 10-163536 (1998-06-01), None
patent: 10-173305 (1998-06-01), None
patent: 10-256694 (1998-09-01), None
patent: 10-305620 (1998-11-01), None
patent: 11-8338 (1999-01-01), None
patent: 11-26733 (1999-01-01), None
patent: 11-126037 (1999-05-01), None
patent: 11-142878 (1999-05-01), None
patent: 11-219146 (1999-08-01), None
patent: 2000-89693 (2000-03-01), None
patent: WO 95/05623 (1995-02-01), None
Applied Physics Letters, vol. 76, No. 22, May 29, 2000, Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature, Tachibani et al., pp. 3212-3214.

Affiliated with

Also associated with

Rating

Method of transferring a device, a method of producing a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of transferring a device, a method of producing a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of transferring a device, a method of producing a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3416300