Method of high selectivity wet etching of salicides

Details Method of high selectivity wet etching of salicides Method of high selectivity wet etching of salicides

2005-04-05

2005-04-05

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S630000, C438S683000, C438S750000

Reexamination Certificate

active

06875705

ABSTRACT:
A method for forming salicides with lower sheet resistance and increased sheet resistance uniformity over a semiconductor process wafer including providing a semiconductor process wafer having exposed silicon containing areas at a process surface; depositing a metal layer including at least one of cobalt and titanium over the process surface; carrying out at least one thermal annealing process to react the metal layer and silicon to form a metal silicide over the silicon containing areas; and, wet etching unsilicided areas of the metal layer with a wet etching solution including phosphoric acid (H3PO4), nitric acid (HNO3), and a carboxylic acid to leave salicides covering silicon containing areas at the process surface.

REFERENCES:
patent: 5933757 (1999-08-01), Yoshikawa et al.
patent: 6271133 (2001-08-01), Lim et al.

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