CuS formation by anodic sulfide passivation of copper surface

Details CuS formation by anodic sulfide passivation of copper surface CuS formation by anodic sulfide passivation of copper surface

2005-05-17

2005-05-17

Zarneke, David (Department: 2829)

Semiconductor device manufacturing: process

Having organic semiconductive component

Reexamination Certificate

active

06893895

ABSTRACT:
Disclosed are methods of making memory cells and semiconductor devices containing the memory cells. The methods involve passivating a portion of a copper containing electrode to form a copper sulfide layer in an electrochemical cell by applying a current through a passivation solution containing a sulfide compound. Such devices containing the memory cells are characterized by light weight and robust reliability.

REFERENCES:
patent: 6656763 (2003-12-01), Oglesby et al.
patent: 6683002 (2004-01-01), Chooi et al.
patent: 6686263 (2004-02-01), Lopatin et al.
patent: 6746971 (2004-06-01), Ngo et al.
patent: 6753247 (2004-06-01), Okoroanyanwu et al.

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