Semiconductor device including MOS field effect transistor...

Details Semiconductor device including MOS field effect transistor... Semiconductor device including MOS field effect transistor...

2005-04-19

2005-04-19

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S351000, C257S371000

Reexamination Certificate

active

06881990

ABSTRACT:
First and second impurity doped regions are formed in a semiconductor substrate. A first gate electrode is formed on the first impurity doped region with a first gate insulation film interposed therebetween. A second gate electrode is formed on the second impurity doped region with a second gate insulation film interposed therebetween. A first sidewall insulation film is formed on either side of the first gate electrode. A second sidewall insulation film has a thickness different from that of the first sidewall insulation film and are formed on either side of the second gate electrode. A third sidewall insulation film is formed on the first sidewall insulation film on the side of the first gate electrode. A fourth sidewall insulation films have a thickness different from that of the third sidewall, insulation film and are formed on the second sidewall insulation film on the side of the second gate electrode.

REFERENCES:
patent: 5994743 (1999-11-01), Masuoka
patent: 6333540 (2001-12-01), Shiozawa et al.
patent: 6387743 (2002-05-01), Shiozawa et al.
patent: 0 932 197 (1999-07-01), None
patent: 10-223772 (1998-08-01), None
patent: 11-220038 (1999-08-01), None
patent: 2001-308318 (2001-11-01), None
K. Ota et al., “Double Offset Implantation Technique for High Performance 80nm CMOSFET with Low Gate Leakage Current”, SEMI Forum 2002, ULSI Technology Seminar, Section 4, pp. 42-47.

Affiliated with

Also associated with

Rating

Semiconductor device including MOS field effect transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including MOS field effect transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including MOS field effect transistor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3415544