Nonvolatile semiconductor memory and method of operating the...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185200, C365S185280, C365S185290

Reexamination Certificate

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06947326

ABSTRACT:
A first decision process, which reads data from a memory cell under a first deciding condition to decide pass/fail and applies a signal to the memory cell to change an amount of charge stored in the memory cell if the data is decided as fail, and a second decision process, which reads the data from the memory cell under a second deciding condition that is relaxed rather than the first deciding condition to decide the pass/fail, are executed, and then the processes are repeated from the first decision process when the data is decided as fail in the second decision process.

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patent: 6493265 (2002-12-01), Satoh et al.
patent: 1 182 669 (2002-02-01), None
patent: 2000-174235 (2000-06-01), None
patent: 2001-325793 (2001-11-01), None

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