Method for manufacturing a high frequency semiconductor...

Details Method for manufacturing a high frequency semiconductor... Method for manufacturing a high frequency semiconductor...

2005-09-27

2005-09-27

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

With high resistivity

C257S523000, C438S379000, C438S223000

Reexamination Certificate

active

06949812

ABSTRACT:
A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. The buffer layer is made of an undoped material and is disposed on a top side of the well for inhibiting an outdiffusion of a dopant from the well. At least a portion of the substrate is not covered by the buffer layer.

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patent: 5442205 (1995-08-01), Brasen et al.
patent: 6426547 (2002-07-01), Greenberg et al.
patent: 2003/0199153 (2003-10-01), Kovacic et al.
patent: 197 37 360 (1999-01-01), None
Rohde, U. L.: “Microwave and Wireless Synthesizers”, John Wiley & Sons Inc., 1997, pp. 60-64.

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