Surface acoustic wave device on LiTaO3 substrate using...

Wave transmission lines and networks – Coupling networks – Electromechanical filter

Reexamination Certificate

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C310S31300R

Reexamination Certificate

active

06914498

ABSTRACT:
A surface acoustic wave device has a significantly improved frequency temperature characteristic due to the arrangement of a SiO2film on an IDT such that cracking in the SiO2film surface is prevented from occurring, desired characteristics are reliably achieved, the electromechanical coupling coefficients is increased, and the attenuation constant α is reduced. In the surface acoustic wave device, at least one IDT primarily including Ag is arranged on a 20° to 60°-rotated Y plate LiTaO3substrate, and the SiO2film is arranged on the LiTaO3substrate while covering the IDT.

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