Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-07-05
2005-07-05
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S014000, C257S021000, C257S080000, C257S098000, C257S103000, C257S184000, C257S918000
Reexamination Certificate
active
06914262
ABSTRACT:
Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.
REFERENCES:
patent: 6608330 (2003-08-01), Yamada
patent: 6815725 (2004-11-01), Sugawara et al.
Hahm Hun Joo
Kim In Eung
Lee Soo Min
Na Jeong Seok
Park Young Ho
Huynh Andy
Lowe Hauptman & Berner LLP
Samsung Electro-Mechanics Co. Ltd.
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