Non-volatile memory device and matrix display panel using...

Details Non-volatile memory device and matrix display panel using... Non-volatile memory device and matrix display panel using...

2005-03-29

2005-03-29

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S295000

Reexamination Certificate

active

06872969

ABSTRACT:
A non-volatile memory device and a matrix display panel using the memory device are provided. The non-volatile memory device includes a source, a drain, an active layer, a gate insulating layer, and a gate. The active layer is formed of an organic semiconductor in a contact region between the source and the drain. The gate-insulating layer is formed of a ferroelectric material on the active layer, and the gate is formed on the gate-insulating layer. Accordingly, the non-volatile memory device and the matrix display panel are very flexible, lightweight multi-programmable and can be easily manufactured.

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