Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-04-05
2005-04-05
Ho, Hoai (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185190, C365S185260, C365S185270
Reexamination Certificate
active
06876583
ABSTRACT:
A non-volatile memory device includes floating gate memory cells, a pulse counter and voltage pump control circuitry. The control circuitry selectively activates pumps in response to a count output of the counter. In one embodiment, the pump output current is increased as the counter output increases. The memory allows for erase operations that reduce leakage current during initiation of an erase operation.
REFERENCES:
patent: 4752699 (1988-06-01), Cranford, Jr. et al.
patent: 5463588 (1995-10-01), Chonan
patent: 5801987 (1998-09-01), Dinh
patent: 6385093 (2002-05-01), Bautista, Jr. et al.
patent: 6515909 (2003-02-01), Wooldridge
patent: 6643181 (2003-11-01), Sofer et al.
Ho Hoai
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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