Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-03-01
2005-03-01
Jones, Deborah (Department: 1775)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S040000, C257S103000, C257S918000, C257S013000, C428S620000, C428S690000, C428S697000, C428S698000, C428S699000, C428S704000, C372S045013
Reexamination Certificate
active
06861672
ABSTRACT:
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
REFERENCES:
patent: 4971928 (1990-11-01), Fuller
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5255279 (1993-10-01), Takahashi et al.
patent: 5381260 (1995-01-01), Ballato et al.
patent: 5534950 (1996-07-01), Hargis et al.
patent: 5537433 (1996-07-01), Watanabe
patent: 5787104 (1998-07-01), Kamiyama et al.
patent: 02-058848 (1990-02-01), None
patent: 04-098791 (1992-03-01), None
patent: 406029574 (1994-02-01), None
patent: 7-162038 (1995-06-01), None
patent: 08-255932 (1996-10-01), None
patent: 10-004227 (1998-01-01), None
“inGaN/AlGaN blue-light-emitting diodes,” S. Nakamura,J. Vac. Sci. Technol. A, vol. 13, No. 3, pp. 705-710, (1995).
H. Amano et al., “Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates”, Japanese Journal of Applied Physics, vol. 27, No. 8, Aug., 1988, pp. L1384-L1386.
Nido, “Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method”, Jpn. J. Appl. Phys. vol. 34, Part 2, No. 11B, pp. 1513-1516.
Adachi Hideto
Fukuhisa Toshiya
Ishibashi Akihiko
Kamiyama Satoshi
Kidoguchi Isao
Jones Deborah
Xu Ling
LandOfFree
Semiconductor light emitting element and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting element and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting element and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3413212