Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-01-18
2005-01-18
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S197000
Reexamination Certificate
active
06844243
ABSTRACT:
The invention includes a method of forming a semiconductor construction. A first substrate is provided which comprises silicon-containing structures separated from one another by an insulative material. The silicon-containing structures define an upper surface. A second semiconductor substrate is provided which comprises a monocrystalline material having a damage region therein. The second semiconductor substrate is bonded to the silicon-containing structures of the first substrate at the upper surface. The monocrystalline material is then cleaved along the damage region. The invention also encompasses a semiconductor construction comprising a first substrate having silicon-containing structures separated from one another by an insulative material, and a second substrate comprising a monocrystalline material. The silicon-containing structures of the first substrate define an upper surface, and the monocrystalline material of the second substrate is bonded over the silicon-containing structures at the upper surface.
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Lee Calvin
Micro)n Technology, Inc.
Smith Matthew
Well St. John P.S.
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