Method and apparatus for predicting electrical parameters...

Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing

Reexamination Certificate

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C702S057000

Reexamination Certificate

active

06917849

ABSTRACT:
A method includes collecting a first fabrication parameter associated with the processing of a selected semiconductor device. A second fabrication parameter is estimated for the selected semiconductor device. A first value for at least one electrical characteristic of the selected semiconductor device is predicted based on the collected first fabrication parameter and the estimated second fabrication parameter. A system includes a data collection unit and a prediction unit. The data collection unit is configured to collect a first fabrication parameter associated with the processing of a selected semiconductor device. The prediction unit is configured to estimate a second fabrication parameter for the selected semiconductor device and predict a first value for at least one electrical characteristic of the selected semiconductor device based on the collected first fabrication parameter and the estimated second fabrication parameter.

REFERENCES:
patent: RE35671 (1997-11-01), Hartoog
patent: 6064916 (2000-05-01), Yoon
patent: 6449524 (2002-09-01), Miller et al.
patent: 6485872 (2002-11-01), Rosenthal et al.
patent: 2003/0229412 (2003-12-01), White et al.
patent: 2004/0040001 (2004-02-01), Miller et al.
patent: 2004/0143357 (2004-07-01), Schwarm et al.

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