Semiconductor device having increased adhesion between a...

Details Semiconductor device having increased adhesion between a... Semiconductor device having increased adhesion between a...

2005-05-31

2005-05-31

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000

Reexamination Certificate

active

06900542

ABSTRACT:
A semiconductor device comprises of an insulating film (14) formed over a semiconductor substrate (1), a trench (14b) and a hole (14a) formed in the insulating film (14), a first underlying layer (16) formed in at least one of the trench (14b) and the hole (14a) and made of conductive material to prevent diffusion of copper, a main conductive layer (19) formed in at least one of the trench (14b) and the hole (14a) on the first underlying layer (19) and made of copper or copper alloy, and a second underlying layer (17) formed between the main conductive layer (19) and the first underlying layer (16) and having a metal element that is solid-solved in the main conductive layer at an interface between the second underlying layer (17) and the main conductive layer (19), and formed on the first underlying layer (16) by a CVD method.

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patent: 2001-284358 (2001-10-01), None

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