Method of forming MEMS device

Details Method of forming MEMS device Method of forming MEMS device

2005-03-01

2005-03-01

Lee, Dung a. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S022000, C359S291000, C427S255600

Reexamination Certificate

active

06861277

ABSTRACT:
A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer. As such, the method further includes substantially removing the first sacrificial layer and the second sacrificial layer, thereby supporting the second element relative to the first element with the support.

REFERENCES:
patent: 5485304 (1996-01-01), Kaeriyama
patent: 5583688 (1996-12-01), Hornbeck
patent: 5631782 (1997-05-01), Smith et al.
patent: 5646768 (1997-07-01), Kaeriyama
patent: 5650881 (1997-07-01), Hornbeck
patent: 5703728 (1997-12-01), Smith et al.
patent: 5919548 (1999-07-01), Barron et al.
patent: 6025951 (2000-02-01), Swart et al.
patent: 6038056 (2000-03-01), Florence et al.
patent: 6121552 (2000-09-01), Brosnihan et al.
patent: 6323982 (2001-11-01), Hornbeck
patent: 6396368 (2002-05-01), Chow et al.
patent: 6440766 (2002-08-01), Clark
patent: 6469330 (2002-10-01), Vigna et al.
patent: 6480320 (2002-11-01), Nasiri
patent: 6523961 (2003-02-01), Ilkov et al.
patent: 20020039470 (2002-04-01), Braun et al.
patent: 20030034535 (2003-02-01), Barenburg et al.
patent: 20040156090 (2004-08-01), Patel et al.
patent: 1093143 (2001-04-01), None
patent: 2000314634 (2001-07-01), None
J.H. Smith et al., “Material and Processing Issues for the Monolithic Integration of Microelectronics with Surface-Micromachined Polysilicon Sensors and Actuators” SPIE, Oct. 1995, pp. 1-10.
Oliver Brand, “CMOS-based MEMS/DTU PhD Course/Topics in Microelectronics”, Physical Electronics Laboratory, ETH Zurich, http://www.iqe.ethz.ch/pel, slides A-2 through A-36.
J.H. Smith et al., “Embedded Micromechanical Devices for the Monolithic Integration of MEMS with CMOS”, 1995 IEEE, pp. 609-612.
Bikram Baidaya et al., “Layout Verification and Correction of CMOS-MEMS Layouts”, Carnegie Mellon University, Pittsburgh.
Jeffrey D. Zahn et al., A Direct Plasma Etch Approach to High Aspect Ratio Polymer Micromachining With Applications in Biomems and CMOS-MEMS, 2002 IEEE, pp. 137-140
Jim Hunter et al., “CMOS friendly MEMS manufacturing process”, 1998 IEEE, pp. 103-104.

Affiliated with

Also associated with

Rating

Method of forming MEMS device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming MEMS device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming MEMS device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3409343