Method of semiconductor processing including fluoride

Details Method of semiconductor processing including fluoride Method of semiconductor processing including fluoride

2005-01-04

2005-01-04

Nguyen, Van Thu (Department: 2824)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S743000, C438S744000, C438S756000, C438S757000

Reexamination Certificate

active

06838391

ABSTRACT:
A method for the production of semiconductor components which includes applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. At least one of the masking layers is HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.

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