Semiconductor memory device having row decoder in which...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185180, C365S185230, C365S230060

Reexamination Certificate

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06868010

ABSTRACT:
A semiconductor memory device includes a first, second, and third memory cell transistors in which information can be electrically rewritten, addresses of which are consecutive in a row direction. One end of a current passage in each of a first, second, and third transfer transistors is connected to a control electrode of the first, second, and third memory cell transistors. A write voltage, a pass voltage lower than the write voltage, and a first voltage lower than the pass voltage are applied to the other ends of the first, second, and third transfer transistors. A first control section applies the first on-voltage to make the first transfer transistor conductive, to a gate of the first transfer transistor. A second control section applies a second on-voltage to make the second and third transfer transistors conductive, to gates of the second and third transfer transistors.

REFERENCES:
patent: 4996669 (1991-02-01), Endoh et al.
patent: 5088060 (1992-02-01), Endoh et al.
patent: 5530669 (1996-06-01), Oyama
patent: 5617359 (1997-04-01), Ninomiya
patent: 6278639 (2001-08-01), Hosono et al.
patent: 6404274 (2002-06-01), Hosono et al.

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