Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2005-04-12
2005-04-12
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S379000, C310S311000, C310S322000
Reexamination Certificate
active
06878604
ABSTRACT:
A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode, an upper electrode and a layer which is arranged between them and is piezoelectrical or pyroelectrical. An auxiliary layer is arranged between the lower electrode and the layer and is used for homogeneously oriented growth of the layer during the production process. The auxiliary layer preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.
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Aigner Robert
Elbrecht Lueder
Herzog Thomas Rainer
Marksteiner Stephan
Nessler Winfried
Infineon - Technologies AG
Perkins Pamela E
Schiff & Hardin LLP
Zarabian Amir
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