Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-05-24
2005-05-24
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S781000
Reexamination Certificate
active
06897160
ABSTRACT:
A method for forming a rough ruthenium-containing layer on the surface of a substrate assembly includes providing a ruthenium-containing precursor into the reaction chamber. A rough ruthenium layer may be deposited on the surface of the substrate assembly at a rate of about 100 Å/minute to about 500 Å/minute using the ruthenium-containing precursor. Further, a rough ruthenium oxide layer may be formed by providing a ruthenium-containing precursor and an oxygen-containing precursor into the reaction chamber to deposit the rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute. An anneal of the layers may be performed to further increase the roughness. In addition, conductive structures including a rough ruthenium layer or a rough ruthenium oxide layer are provided. Such layers may be used in conjunction with non-rough ruthenium and/or non-rough ruthenium oxide layers to form conductive structures. For example, such structures may be part of a capacitor structure, e.g., bottom electrode of a capacitor.
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Agarwal Vishnu K.
Derderian Garo
Dang Phuc T.
Mueting, Raasch and Gebhardt, P.A.
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