Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-04-19
2005-04-19
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S759000, C257S792000, C257S793000
Reexamination Certificate
active
06882050
ABSTRACT:
A semiconductor device having bump electrodes electrically connected to connection pads formed on a semiconductor chip of the semiconductor device, tips of the bump electrodes exposing at a surface of a sealing resin film formed on a surface of the semiconductor chip, wherein the sealing resin film is comprised of a low-elastic resin layer formed on the surface of the semiconductor chip and a high-elastic resin layer formed on a surface of the low-elastic resin layer and having an elastic coefficient higher than that of the low-elastic resin layer, a thickness of the high-elastic resin layer being between 5 μm and 45 μm.
REFERENCES:
patent: 6605834 (2003-08-01), Lee
patent: 6624504 (2003-09-01), Inoue et al.
patent: 20020030258 (2002-03-01), Fukasawa et al.
patent: 10-079362 (1998-03-01), None
patent: 2000-022052 (2000-01-01), None
Ngo Ngan V.
Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt PLLC
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