Localized heating for defect isolation during die operation

Details Localized heating for defect isolation during die operation Localized heating for defect isolation during die operation

2005-03-29

2005-03-29

Nguyen, Vinh P. (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S765010

Reexamination Certificate

active

06873166

ABSTRACT:
According to an example embodiment, a system for testing a semiconductor die is provided. The semiconductor die has circuitry on one side and silicon on an opposite side, and the opposite side may be AR coated. The opposite side is thinned, the die is powered, and a portion of the circuitry is heated to cause a reaction (e.g., a circuit failure or recovery) in a target region. The circuitry is monitored, and the circuit that reacts to the heat is detected and analyzed.

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