Photodiode

Details Photodiode Photodiode

2005-04-26

2005-04-26

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S461000, C358S003050

Reexamination Certificate

active

06885075

ABSTRACT:
A photodiode (A) comprises a substrate, a light receiving layer having a band gap wavelength and including a pn-junction and at least an absorption layer having a band gap wavelength λg. One of the absorption layers is sandwiched between the substrate and the light receiving layer, the band gap wavelength λg of the absorption layer is shorter than the receiving signal wavelength λ2but longer than noise wavelength λ1(λ1<λg<λ2). Otherwise a photodiode (B) has two absorption layers epitaxially made on the substrate. One absorption layer is formed on the top surface of the substrate. The other absorption layer is formed on the bottom surface of the substrate. The absorption layers annihilate the noise λ1. The PD has no sensitivity to λ1.

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patent: 0 901 170 (2000-03-01), None
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