Method for chemical mechanical planarization (CMP) and...

Abrading – Abrading process – Glass or stone abrading

Reexamination Certificate

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C451S036000

Reexamination Certificate

active

06875087

ABSTRACT:
A method is provided for planarizing/polishing and subsequently in situ cleaning a surface of a work piece such as a semiconductor wafer. The method includes the steps of planarizing/polishing the surface of a work piece by subjecting a work piece surface to a chemical mechanical planarization/polishing (CMP) process on a chemical mechanical planarization/polishing platen such that the planarization/polishing process leaves the surface of the work piece hydrophobic. The planarization/polishing process is followed by a chemical mechanical cleaning (CMC) process in which the planarized/polished surface of the work piece is subjected to the cleaning process on the same chemical mechanical planarization/polishing platen such that the cleaning process leaves the surface of the work piece hydrophilic.

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patent: 6391779 (2002-05-01), Skrovan
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