One-chip micro-integrated optoelectronic sensor

Details One-chip micro-integrated optoelectronic sensor One-chip micro-integrated optoelectronic sensor

2005-04-19

2005-04-19

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S082000, C257S084000, C257S096000, C257S432000, C257S440000, C257S449000, C257S461000

Reexamination Certificate

active

06881979

ABSTRACT:
This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence. The sensors may be fabricated and operated to provide a selected spectrum of light emitted and a multi-quantum well heterostructure may be fabricated to filter light reaching the photodetector.

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