Semiconductor laser with a lattice structure

Details Semiconductor laser with a lattice structure Semiconductor laser with a lattice structure

2005-01-25

2005-01-25

Fourson, Goerge (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S032000, C438S039000, C372S049010

Reexamination Certificate

active

06846689

ABSTRACT:
A semiconductor laser (22) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, a waveguide ridge (15) arranged at a distance from the laser layer, and a strip-shaped lattice structure (23) arranged in parallel to the laser layer is disclosed. The lattice structure (23) includes two structural regions (24, 25) which are arranged on both sides of the waveguide ridge (15) and are formed at a distance from the laser layer (13) above the laser layer (13). A process for the production of such a semiconductor laser is also disclosed.

REFERENCES:
High Performance laterally gain coupled InGaAs / AlGaAs DFB lasers, Kamp et al., May 1998.
CW Performance of an InGaAs-GaAs-AlGaAs Laterally-Coupled Distributed Feedback (LC-DFB) Ridge Laser Diode, Martin et al., Mar. 1995.
“Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers” , Kamp et al., Jan. 25, 1999.
“Low threshold II-VI laser diodes with transversal and longitudinal single-mode emission”, Legge et al., 2000.
“1.3-MUM wavelength INP laterally coupled distributed feedback ridge laser”, Chen et al., 1997.

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