Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-07-19
2005-07-19
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S427000, C257S565000
Reexamination Certificate
active
06919608
ABSTRACT:
A spin transistor (10) comprises a spin injector (50) formed of a ferromagnetic material and constituting the emitter (20) of a three-terminal device, a spin filter (70) also formed of a ferromagnetic material and constituting a collector (40), and a semiconductor base (30) region.A tunnelling barrier (60) is formed of an insulating metal oxide such as aluminium oxide between the emitter (20) and the base (30). The tunnelling barrier (60) reduces the degree of spin depolarization as carriers are injected into the base (30), and permits selection of spin injection energy. In preferred embodiments, a second tunnelling barrier (80) may be formed between the base (30) and the collector (40). A method of manufacture is also provided.
REFERENCES:
patent: 5416353 (1995-05-01), Kamiguchi et al.
patent: 5747859 (1998-05-01), Mizushima et al.
patent: 5757056 (1998-05-01), Chui
patent: 5962905 (1999-10-01), Kamiguchi et al.
patent: 5973334 (1999-10-01), Mizushima et al.
patent: 6218718 (2001-04-01), Gregg et al.
patent: 6624490 (2003-09-01), Flatte et al.
Isis Innovation Limited
Wilson Allan R.
Wolf Greenfield & Sacks P.C.
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