Semiconductor memory device for storing multivalued data

Details Semiconductor memory device for storing multivalued data Semiconductor memory device for storing multivalued data

2005-04-05

2005-04-05

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185120

Reexamination Certificate

active

06876578

ABSTRACT:
Before the next data is stored into a first memory cell in which i bits of data have been stored, i or less bits of data are written into cells adjacent to the first memory cell beforehand. The writing of i or less bits of data is done using a threshold voltage lower than the original threshold voltage (or the actual threshold voltage in storing i bits of data). After the adjacent cells have been written into, writing is done to raise the threshold voltage of the first memory cell.

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U.S. Appl. No. 10/373,920, filed Feb. 27, 2003, Tanaka.
U.S. Appl. No. 10/051,372, filed Nov. 4, 2003, Tanaka et al.

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