Compound semiconductor switching device for high frequency...

Details Compound semiconductor switching device for high frequency... Compound semiconductor switching device for high frequency...

2005-03-29

2005-03-29

Chin, Vivian (Department: 2682)

Telecommunications

Transmitter and receiver at same station

With transmitter-receiver switching or interaction prevention

C333S100000

Reexamination Certificate

active

06873828

ABSTRACT:
A compound semiconductor switching device is based on a designing guideline that isolation should be assured by reducing the gate width of switching FET, thereby reducing the capacitance of the FET. Proper isolation between the two signal passes IS obtained with a FET gate width of about 700 μm or smaller at a signal frequency of about 2.4 GHz or higher, without employing a shunt FET.

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Office Action from Taiwan Patent office dated Apr. 24, 2002.

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