Semiconductor device and a fabrication method thereof

Details Semiconductor device and a fabrication method thereof Semiconductor device and a fabrication method thereof

2005-04-05

2005-04-05

Ho, Hoai (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S639000

Reexamination Certificate

active

06876065

ABSTRACT:
A semiconductor device and fabrication method thereof that uses a far ultraviolet ray photolithography, which may be used to prevent the lift phenomenon of a photoresist pattern, is disclosed. The semiconductor device may be fabricated by the process of: forming a film which is an object of forming a pattern on a structure of a semiconductor substrate; forming a anti-reflection layer on the film to form a stacking structure including the film and the anti-reflection layer; performing a plasma treatment to form grooves on a upper surface of the stacking structure; forming a photoresist pattern on the stacking structure on which the grooves are formed; and etching the stacking structure using the photoresist pattern as a mask to form a stacking structure pattern.

REFERENCES:
patent: 5100503 (1992-03-01), Allman et al.
patent: 6586820 (2003-07-01), Yin et al.
patent: 6610616 (2003-08-01), Koh et al.

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