Production method for a halftone phase mask

Details Production method for a halftone phase mask Production method for a halftone phase mask

2005-07-19

2005-07-19

Letscher, Geraldine (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C216S012000

Reexamination Certificate

active

06919147

ABSTRACT:
The present invention provides a production method for a halftone phase mask which has an SiO2substrate, an overlying refractory metal SixNyphase shifter layer (2) and an overlying chromium oxide or chromium mask layer (3), having the following steps: provision of a mask (4) on the chromium oxide or chromium mask layer (3); etching of the chromium oxide or chromium mask layer (3) for the purpose of forming a hard mask from the chromium oxide or chromium mask layer (3) in a first etching step; selective etching of the refractory metal SixNyphase shifter layer (2) using the hard mask in a plasma with a chlorine-containing and/or hydrogen-chloride-containing main gas in a second etching step with a predetermined cathode power of at least 20 W.

REFERENCES:
patent: 6045954 (2000-04-01), Dai et al.

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