Semiconductor device

Details Semiconductor device Semiconductor device

2005-03-08

2005-03-08

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S690000, C257S737000

Reexamination Certificate

active

06864587

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate, a first pad, a second pad and a conductor. The first pad is formed on the interlayer insulating film and its circumferential edges are covered with a first surface-protecting film. The second pad formed on the interlayer insulating film facing the first pad across a second surface-protecting film, and its circumferential edges are covered with a third surface-protecting film. The conductor is provided continuously on the first pad, the first to third surface-protecting films, and the second pad.

REFERENCES:
patent: 6605871 (2003-08-01), Chaki
patent: 20020125569 (2002-09-01), Fukuda et al.
patent: 11-219967 (1999-08-01), None
patent: 11-219967 (1999-10-01), None
patent: P2001-135794 (2001-05-01), None

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