Multi-level circuit substrate, method for manufacturing same...

Details Multi-level circuit substrate, method for manufacturing same... Multi-level circuit substrate, method for manufacturing same...

2005-03-22

2005-03-22

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S698000, C257S700000, C174S262000

Reexamination Certificate

active

06870264

ABSTRACT:
An insulator is provided between interconnect layers oppositely placed. The interconnect layers are connected between by connection members provided through the insulator. The connection members at one and the other ends are connected between in their center positions. A shield layer is provided spaced from the intermediate connection layer generally on a same plane as the intermediate connection layer. A condition of (R·r)/(2·h)≦L≦(5·R·r)/h is satisfied, provided that a connection distance between the interconnect layers through the connection members and the intermediate connection layer is h, the connection members where considered generally as a circular cylinder have a diameter R, the intermediate connection layer where considered generally as circular has a diameter r, and a spaced distance between the intermediate connection layer and the shield layer is L. Thus, characteristic impedance is stabilized.

REFERENCES:
patent: 4494083 (1985-01-01), Josefsson et al.
patent: 5039965 (1991-08-01), Higgins, Jr.
patent: 5406235 (1995-04-01), Hayashi
patent: 5408053 (1995-04-01), Young
patent: 5450290 (1995-09-01), Boyko et al.
patent: 5459368 (1995-10-01), Onishi et al.
patent: 5473120 (1995-12-01), Ito et al.
patent: 5734560 (1998-03-01), Kamperman et al.
patent: 5830301 (1998-11-01), Sturzebecher et al.
patent: 5835357 (1998-11-01), Swamy et al.
patent: 5-206678 (1993-08-01), None

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