Method of making a thin semiconductor chip

Details Method of making a thin semiconductor chip Method of making a thin semiconductor chip

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C438S118000, C438S782000, C438S906000

Reexamination Certificate

active

06872598

ABSTRACT:
A semiconductor device wafer11is integrated with a supporting board13by a double-faced thermally foaming adhesive sheet12,and this assembly is fixed to a vacuum sucking pedestal14under vacuum sucking. A thermally foaming adhesive layer of the adhesive sheet12functions as a shock absorber, whereby the wafer11hardly cracks during a high-speed grinding operation even if the wafer uses a GaAs substrate which is susceptible to damages. Neither fixing of the wafer11using wax nor abrasion using an oil abrasive agent is necessary, so that contamination of wax and oil is prevented and cleaning of the wafer becomes easy. Heating at 130° C. makes the thermally foaming adhesive layer of the adhesive sheet12expand so that the wafer11is readily separated from the adhesive sheet.

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patent: 6398892 (2002-06-01), Noguchi et al.
patent: 6676492 (2004-01-01), Li
patent: 20030113984 (2003-06-01), Okada et al.
patent: 64-64771 (1989-03-01), None
patent: 6-216092 (1994-08-01), None

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