Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-05-24
2005-05-24
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S709000, C438S712000, C438S717000
Reexamination Certificate
active
06897158
ABSTRACT:
This invention provides a directional ion etching process for making nano-scaled angled features such as may be used, for example, in liquid crystal displays and or nanoimprinting templates. In a particular embodiment a semiconductor wafer substrate is prepared with at least one layer of material. A photoresist is applied, masked, exposed and developed. Anisotropic ion etching at a high angle relative to the wafer is performed to remove portions of the non protected material layer. The remaining photoresist caps shadow at least a portion of the material layer, and as the ion etching is performed at an angle, the protected portions of the material layer also appear at an angle.
REFERENCES:
patent: 5948470 (1999-09-01), Harrison et al.
patent: 6399286 (2002-06-01), Liu et al.
patent: 6498092 (2002-12-01), Lee et al.
patent: 6746965 (2004-06-01), Uehara et al.
patent: 20040266179 (2004-12-01), Sharma
Stephen Kitson and Adrian Geisow, “Controllable alignment of nematic liquid crystals around microscopic posts: Stabilizationof multiple states,” Appl. Phys. Lett., pp. 3635-3637, vol. 80, No. 19, May 13, 2002.
Hewlett--Packard Development Company, L.P.
Le Dung A.
LandOfFree
Process for making angled features for nanolithography and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for making angled features for nanolithography and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making angled features for nanolithography and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3394286