Semiconductor device having element isolation structure

Details Semiconductor device having element isolation structure Semiconductor device having element isolation structure

2005-04-12

2005-04-12

Blum, David S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

C257S684000

Reexamination Certificate

active

06879029

ABSTRACT:
When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.

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